Non–zero-crossing current-voltage hysteresis behavior in memristive system

Materials Today Advances

Y.A. Wu¹  Y.N. Zhou²  M. Xiao³  B. Sun⁴  G. Zhou⁴  Z. Ren⁵ 

[1] Advanced Materials (ICEAM), Southwest University, Chongqing, 400715, China;;Institute for Clean Energy &School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan, 610031, China;Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada;School of Artificial Intelligence, Southwest University, Chongqing, 400715, China;

关键词: Current-voltage curves;    Hysteresis behavior;    Memristor;    Capacitive;    Ferroelectric;    Internal electromotive force;   

DOI  :  

来源: DOAJ

【 摘 要 】

Since the memristor was theoretically predicted at 1971, the research on memristor and memristive behavior has attracted great interest. However, there is a debate about the physical model of the non–zero-crossing (or named non-pinched) current-voltage (I–V) hysteresis behavior observed experimentally in many reported memristive devices. By identifying and analyzing all these non–zero-crossing hysteresis curves, we attribute this behavior to three mechanisms: the involvement of a capacitive effect, the appearance of a ferroelectric or piezoelectric polarization, and the formation of an internal electromotive force. Among them, the memristive behavior involving a capacitive effect has been reported extensively. It demonstrates that the combination of multiple physical properties (memristive and capacitive) in a single device could prefigure potential multifunctional applications. In this review, we discuss the physical mechanism of non–zero-crossing I–V curves, the related research progress with particular emphasis on the origin of non–zero-crossing I–V curves. Moreover, the existing problems in this field and the possible solutions will be discussed, providing an outlook for the future developments.

【 授权许可】

Unknown