Strain-durable dark current in near-infrared organic photodetectors for skin-conformal photoplethysmographic sensors

iScience

Jong H. Kim¹  Yeongseok Shim²  Sungjun Park²  Hanbee Lee²  Junseok Heo²  Ah Young Lee³  Jong Jin Park³  Gyeong Uk Seo³  Hyeong Ju Eun³ 

[1] Corresponding author;Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea;Department of Molecular Science and Technology, Ajou University, Suwon 16449, Republic of Korea;

关键词: Applied sciences;    Sensor;    Wearable computing;   

DOI  :  

来源: DOAJ

【 摘 要 】

Summary: Sensitive detection of near-infrared (NIR) light is applicable to variety of optical, chemical, and biomedical sensors. Of these diverse applications, NIR photodetectors have been used as a key component for photoplethysmography (PPG) sensors. In particular, because NIR organic photodetectors (OPDs) enable fabrication of stretchable and skin-conformal PPG sensors, they are attaining tremendously increasing interest in both academia and industry. Herein, we report strain-durable and highly sensitive NIR OPDs using an organic bulk heterojunction (BHJ) layer. For effective suppression of dark current, we employed BHJ combination consisting of PTB7-Th:Y6 which forms high energy barrier against transport-injected holes. The optimized OPDs exhibited high specific detectivity up to 2.2 × 1012 Jones at 800 nm. By constructing the devices on the parylene substrates, we successfully demonstrated stretchable NIR OPDs and high-performance skin-conformal PPG sensors.

【 授权许可】

Unknown