Characterization and optimization of gate driver turn-off voltage for eGaN HEMTs in a phase-leg configuration

Energy Reports

Wenlu Wang¹  Haihong Qin²  Ao Liu²  Zihe Peng²  Song Bai³ 

[1] Corresponding author.;College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, Nanjing 210016, China;

关键词: Gate driver turn-off voltage;    Reverse conduction loss;    Switching loss;    Crosstalk suppression;   

DOI  :  

来源: DOAJ

【 摘 要 】

Affected by high switching speed and parasitic parameters, crosstalk problem of eGaN HEMT in a phase-leg configuration cannot be ignored. By decreasing gate driver turn-off voltage, the false turn-on phenomenon of device caused by crosstalk can be avoided, but it is hard to realize the minimization of total power loss. Thus, we analyze the influence of gate driver turn-off voltage on eGaN HEMT reverse conduction loss, switching loss and crosstalk voltage, and propose an optimized design rules for determining turn-off voltage value in a phase-leg configuration. By reasonably choosing gate driver turn-off voltage, a balance between optimal loss and reliable operation is achieved, thereby effectively alleviating the conflict between efficiency and reliability in the power electronic system.

【 授权许可】

Unknown