IEEE Photonics Journal | |
Si-Rich |
|
Gong-Ru Lin1  Ling-Hsuan Tsai1  Chun-Chieh Chen1  Chung-Lun Wu1  Yung-Hsiang Lin1  Chih-Hsien Cheng2  | |
[1] Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering , National Taiwan University, Taipei, Taiwan;Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan; | |
关键词: Silicon nanophotonics; quantum dots (QDs) and single molecules; light-emitting diodes (LED); | |
DOI : 10.1109/JPHOT.2012.2215917 | |
来源: DOAJ |
【 摘 要 】
The nonstoichiometric ITO/n-SiC/i-SiC/p-Si/Al light-emitting diodes (LEDs) with dense Si quantum dots (Si-QDs) embedded in the Si-rich SixC1-x -based i-SiC layer are demonstrated. The Si-rich SixC1-x films with buried Si-QDs are grown by the plasma-enhanced chemical vapor deposition with varying substrate temperatures. After the annealing process, the average Si-QD size in the Si-rich Si0.52C0.48 film is 2.7 ± 0.4 nm with a corresponding volume density of 1.43 × 1018 cm-3. By increasing the deposition temperatures from 300°C to 650°C, the turn-on voltage and turn-on current of the ITO/n-SiC/i-SiC/p-Si/Al LEDs are found to decrease from 13 to 4.2 V and from 0.63 to 0.34 mA, respectively. In addition, these Si-rich SixC1-x LEDs provide the maximal electroluminescent (EL) power intensity increasing from 1.1 to 4.5 μW/cm2. The yellow (at 570 nm) EL emission power of the ITO/n-SiC/i-SiC/p-Si/Al LEDs reveals a saturated phenomenon due to the Auger effect. The dissipated energy by the lattice thermal vibration contributes to a decayed EL emission power at higher biased currents. The corresponding power-current slope is observed to enhance from 0.45 to 0.61 μW/A with the substrate temperature increasing to 650°C.
【 授权许可】
Unknown