Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Applied Sciences

Chia-Hsun Hsu¹  Yun-Shao Cho¹  Shui-Yang Lien¹  Song-Yan Chen²  Wei Huang²  Lian-Dong Chen³  Xiao-Ying Zhang³  Wen-Zhang Zhu³  Si-Xin Huang³  Lin-Gui Xie³  Xu-Yang Zou³ 

[1] Department of Materials Science and Engineering, Da-Yeh University, ChungHua 51591, Taiwan;Department of Physics, OSED, Xiamen University, Xiamen 361005, China;School of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China;

关键词: hafnium oxide;    atomic layer deposition;    crystalline silicon solar cell;    annealing;   

DOI  :  10.3390/app7121244

来源: DOAJ

【 摘 要 】

Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO2) has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, HfO2 films are deposited on n-type c-Si using remote plasma atomic layer deposition (RP-ALD). Post-annealing is performed using a rapid thermal processing system at different temperatures in nitrogen ambient for 10 min. The effects of post-annealing temperature on the passivation properties of the HfO2 films on c-Si are investigated. Personal computer one dimension numerical simulation for the passivated emitter and rear contact (PERC) solar cells with the HfO2 passivation layer is also presented. By means of modeling and numerical computer simulation, the influence of different front surface recombination velocity (SRV) and rear SRV on n-type silicon solar cell performance was investigated. Simulation results show that the n-type PERC solar cell with HfO2 single layer can have a conversion efficiency of 22.1%. The PERC using silicon nitride/HfO2 stacked passivation layer can further increase efficiency to 23.02% with an open-circuit voltage of 689 mV.

【 授权许可】

Unknown