Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

Science and Technology of Advanced Materials

Régis Debord¹  Stéphane Pailhès¹  Jaume Gazquez²  Claude Botella³  Mihai Apreutesei³  Mohamed Bouras³  Guillaume Saint-Girons³  Adrian Carretero-Genevrier³  Philippe Regreny³  Geneviève Grenet³  Aziz Benamrouche³  Romain Bachelet³ 

[1] Institut Lumière Matière (ILM) - CNRS UMR 5306;Institut de Ciencia de Materials de Barcelona (ICMAB -CSIC);Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270;

关键词: Functional oxides;    Thermoelectricity;    Molecular beam epitaxy;    La-doped SrTiO3;    Integrated films;   

DOI  :  10.1080/14686996.2017.1336055

来源: DOAJ

【 摘 要 】

High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10−4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

【 授权许可】

Unknown