Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

IEEE Access

Oktay Yilmazoglu¹  Franko Kuppers¹  Thomas Kusserow¹  Ahid S. Hajo¹  Armin Dadgar² 

[1] Department of Electrical Engineering and Information Technology, Institute for Microwave Engineering and Photonics (IMP), Technical University of Darmstadt, Darmstadt, Germany;Faculty of Natural Sciences, Institute of Physics, Otto von Guericke University Magdeburg, Magdeburg, Germany;

关键词: Gallium nitride;    gunn diodes;    semiconductor structure;    terahertz source;    side-contact;    field-plate;   

DOI  :  10.1109/ACCESS.2020.2991309

来源: DOAJ

【 摘 要 】

For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width w_d of 1.5 μm with 600 nm effective diode height h_d at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.

【 授权许可】

Unknown