Wavelength Dependence of Transverse Mode Coupling With/Without E-Block of GaN Laser Cavity

IEEE Photonics Journal

Krishneel Lal¹  Greg Chavoor¹  Xiaomin Jin¹ 

[1] Electrical Engineering Department, California Polytechnic State University, San Luis Obispo, CA, USA;

关键词: Gallium-nitride laser diode;    optical mode;    optical mode confinement;   

DOI  :  10.1109/JPHOT.2011.2177451

来源: DOAJ

【 摘 要 】

Transverse mode wavelength dependence in the gallium nitride (GaN) laser cavity is a new topic. Modal analysis simulations are run to optimize the blue GaN-based laser diode with a wavelength of 400, 430, and 460 nm. It is shown that the optical confinement factor (OCF) has a strong dependence on wavelength of emission and electron-block (e-block) thickness. The OCF can be changed from 4.9% at a 460-nm wavelength to 7.6% at 400 nm, which is a 55% difference. The effect of adding an e-block layer of different widths is also investigated with results showing that an e-block layer can change optical confinement by 14% at 460 nm wavelength and 13% at 400 nm wavelength. The bottom n-GaN layer thickness is optimized between 0.1 and 7 μm. It is found that a thin buffer layer improves optical mode distribution by reducing the ghost mode.

【 授权许可】

Unknown