期刊论文详细信息
Materials | |
GaAs Nanomembranes in the High Electron Mobility Transistor Technology | |
Štefan Haščík1  Peter Eliáš1  Roman Stoklas1  Ondrej Pohorelec1  Róbert Kúdela1  Michal Blaho1  Dagmar Gregušová1  Michal Kučera1  Edmund Dobročka1  | |
[1]Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, 841 04 Bratislava, Slovakia | |
关键词: nanomembrane; hybrid integration; GaAs; InGaAs channel; epitaxial lift-off; HEMT; | |
DOI : 10.3390/ma14133461 | |
来源: DOAJ |
【 摘 要 】
A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained:【 授权许可】
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