GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Materials

Štefan Haščík¹  Peter Eliáš¹  Roman Stoklas¹  Ondrej Pohorelec¹  Róbert Kúdela¹  Michal Blaho¹  Dagmar Gregušová¹  Michal Kučera¹  Edmund Dobročka¹ 

[1]Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, 841 04 Bratislava, Slovakia

关键词: nanomembrane;    hybrid integration;    GaAs;    InGaAs channel;    epitaxial lift-off;    HEMT;   

DOI  :  10.3390/ma14133461

来源: DOAJ

【 摘 要 】

A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In_0.23Ga_0.77As channel with a sheet electron concentration of 3.4 × 10¹² cm⁻² and Hall mobility of 4590 cm²V⁻¹s⁻¹, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained: $~-1.5\%$ and $~-0.15\%$. The HRXRD analysis showed the as-grown heterostructure had very good quality and smooth interfaces, and the nanomembrane had its crystalline structure and quality preserved. The PL measurement showed the nanomembrane peak was shifted by 19 meV towards higher energies with respect to that of the as-grown heterostructure. The HEMTs on the nanomembrane exhibited no degradation of the output characteristics, and the input two-terminal measurement confirmed a slightly decreased leakage current.

【 授权许可】

Unknown