Structural Modification of Single-Layer Graphene Under Laser Irradiation Featured by Micro-Raman Spectroscopy

Nanoscale Research Letters

Sergii Nedilko¹  Vitalii Chornii¹  Yurii Stubrov²  Andrii Nikolenko²  Viktor Strelchuk² 

[1] Department of Physics, Kyiv National Taras Shevchenko University;V.E. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine;

关键词: Graphene;    Micro-Raman spectroscopy;    Double electron-phonon resonance mechanism;    Structural defects;    Laser irradiation;    Exposure dose;   

DOI  :  10.1186/s11671-017-2089-6

来源: DOAJ

【 摘 要 】

Abstract Confocal micro-Raman spectroscopy is used as a sensitive tool to study the nature of laser-induced defects in single-layer graphene. Appearance and drastic intensity increase of D- and D′ modes in the Raman spectra at high power of laser irradiation is related to generation of structural defects. Time- and power-dependent evolution of Raman spectra is studied. The dependence of relative intensity of defective D- and D′ bands is analyzed to relate the certain types of structural defects. The surface density of structural defects is estimated from the intensity ratio of D- and G bands using the D-band activation model. Unusual broadening of the D band and splitting of the G band into G− and G+ components with redistribution of their intensities is observed at high laser power and exposition. Position of the G+ band is discussed in relation with nonuniform doping of graphene with charge impurities. Simultaneous presence in the Raman spectra of heavily irradiated graphene of rather narrow G band and broaden D band is explained by coexistence within the Raman probe of more and less damaged graphene areas. This assumption is additionally confirmed by confocal Raman mapping of the heavily irradiated area.

【 授权许可】

Unknown