A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules

Energies

Zhen Hu¹  Kexin Wei²  Ning An²  Mingxing Du² 

[1] School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072, China;Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China;

关键词: insulated gate bipolar transistor (IGBT);    thermal network;    parameter identification;    junction temperature;   

DOI  :  10.3390/en11030595

来源: DOAJ

【 摘 要 】

This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure. In terms of prediction of the transient junction temperature and the steady-state junction temperature, the conventional Cauer-type parameters are modified, and the general method for estimating junction temperature is studied by using the adaptive thermal network model. The results show that junction temperature estimated by our adaptive Cauer-type thermal network model is more accurate than that of the conventional model.

【 授权许可】

Unknown