AES depth profile and photoconductive studies of AgInS2 thin films prepared by co-evaporation

Revista Ingenierías Universidad de Medellín

P Bartolo-Pérez¹  C. A Arredondo²  G Gordillo²  C Calderón²  E Romero² 

[1] Centro de Investigación Científica y de Educación Superior de Ensenada;Universidad Nacional de Colombia;

关键词: XRD;    AES;    celdas solares;    películas delgadas;   

DOI  :  

来源: DOAJ

【 摘 要 】

In this study, thin films of AgInS2 with chalcopyrite-type tetragonal structure were grown by means of a procedure based on the sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process. The effect of the growth temperature and the proportion of the evaporated Ag mass in relation to the evaporated In mass (mAg/mIn) on the phase and homogeneity in the chemical composition were researched through X-ray diffraction measurements and Auger electrons spectroscopy. These measurements evidenced that the conditions for preparing thin films containing only the AgInS2 phase, grown with tetragonal chalcopyrite-type structure and good homogeneity of the chemical composition in the entire volume, are a temperature of 500 °C and a 0.89 mAg/mIn proportion. The transient photocurrent measurements indicated that the electricity transmission is affected by recombination processes via band-to-band transitions and trap-assisted transitions.

【 授权许可】

Unknown