Engineering bandgap of CsPbI3 over 1.7 eV with enhanced stability and transport properties

iScience

Alberto Libanori¹  Gan Luo²  Shumao Xu²  Jun Chen³ 

[1] School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;Department of Bioengineering, University of California, Los Angeles, Los Angeles, CA 90095, USA;School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

关键词: Chemistry;    Quantum Chemistry;    Quantum Optics;    Engineering;   

DOI  :  

来源: DOAJ

【 摘 要 】

Summary: Potential multijunction application of CsPbI3 perovskite with silicon solar cells to reach efficiencies beyond the Shockley-Queisser limit motivates tremendous efforts to improve its phase stability and further enlarge its band gap between 1.7 and 1.8 eV. Current strategies to increase band gap via conventional mixed halide engineering are accompanied by detrimental phase segregation under illumination. Here, ethylammonium (EA) in a relatively small fraction (x < 0.15) is first investigated to fit into three-dimensional CsPbI3 framework to form pure-phase hybrid perovskites with enlarged band gap over 1.7 eV. The increase of band gap is closely associated with the distortion of Pb-I octahedra and the variation of the average Pb-I-Pb angle. Meanwhile, the introduction of EA can retard the crystallization of perovskite and tune the perovskite structure with enhanced phase stability and transport properties.

【 授权许可】

Unknown