Electronics | |
Investigation of Structural and Optoelectronic Properties of Organic Semiconductor Film Based on 8-Hydroxyquinoline Zinc | |
Bertha Molina1  MaríaElena Sánchez Vergara2  Lorena Ramírez Vargas2  Roberto Salcedo3  Citlalli Rios3  | |
[1] Facultad de Ciencias, Universidad Nacional Autónoma de México, Circuito Exterior s/n, Ciudad Universitaria, Coyoacán 04510, Mexico;Facultad de Ingeniería, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Estado de México, Huixquilucan 52786, Mexico;Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito Exterior s/n, Ciudad Universitaria, Coyoacán 04510, Mexico; | |
关键词: DFT calculations; thin film; photoactive layer; optical properties; electrical properties; | |
DOI : 10.3390/electronics10020117 | |
来源: DOAJ |
【 摘 要 】
In this work, we investigated an organic semiconductor based on zinc 8-hydroxyquinoline (ZnQ2) and tetracyanoquinodimethane (TCNQ), which can be used as a photoactive layer in organic devices. The semiconductor was optimized by applying density-functional theory (DFT) methods, and four hydrogen bridges were formed between ZnQ2 and TCNQ. Later, thin films of ZnQ2-TCNQ were successfully deposited. The films were structurally and morphologically characterized, and the optical characteristics of the photoactive layer were investigated using ultraviolet–visible spectroscopy and time-dependent density-functional theory (TDDFT) calculations. The comparison and analysis of the experimental and theoretical absorption spectra indicate that the optical bandgap of the photoactive layer is 2.4 eV. Additionally, a flexible photo device was manufactured with the active layer ZnQ2-TCNQ, and its electrical behavior was evaluated under dark and light conditions. The results show a significant change in the behavior of the device when radiation is eliminated; the layer is light sensitive. The electrical resistance in the flexible photo device is associated with the optical behavior of the materials that constitute the active layer.
【 授权许可】
Unknown