Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor

Sensors & Transducers

V. B. GAIKWAD¹  S. D. SHINDE¹  D. D. KAJALE²  G. H. JAIN²  M. K. DEORE³  N. K. PAWAR⁴ 

[1] Dept. of Chemistry, K.T.H.M. College, Nashik -422 005, India;Dept. of Physics, Arts, Commerce and Science College, Nandgaon- 423 106, India,;Dept. of Physics, Arts, Commerce and Science College, Ozar (Mig) – 422 206, India;Dept. of Physics, K.A.A.N.M.Sonawane College Satana, India;

关键词: ZnO gas sensor;    Thick films;    Sensitivity;    Selectivity;    Response and recovery time;   

DOI  :  

来源: DOAJ

【 摘 要 】

Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 oC, 600 oC and 650 oC for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity) to H2S gas (100 ppm) at 250 oC for firing temperature 650 oC. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDX) and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity), selectivity, response and recovery time of the sensor were measured and presented.

【 授权许可】

Unknown