Dielectric Properties of Mg2TiO4-Doped Ca0.65Sr0.35Zr0.65Ti0.35O3 with High Withstand Voltage and Low Loss

Crystals

Binbin Huang¹  Ping Yu¹  Yun Liu¹  Xiaoyang Chen¹ 

[1] College of Material Science and Engineering, Sichuan University, Chengdu 610064, China;

关键词: linear dielectric thin films;    RF magnetron sputtering;   

DOI  :  10.3390/cryst12030405

来源: DOAJ

【 摘 要 】

Mg₂TiO₄-doped Ca_0.65Sr_0.35Zr_0.65Ti_0.35O₃ (CSZT) thin films with different Mg₂TiO₄ concentrations were deposited on the LaNiO₃(LNO)/p-Si substrate using radio-frequency magnetron sputtering technology. The dielectric response of the prepared x% Mg₂TiO₄-CSZT thin films with frequency, voltage, and temperature was systematically studied. The tanδ and leakage current density of CSZT thin films were reduced effectively by introducing Mg₂TiO₄ content. The prepared 6% Mg₂TiO₄-CSZT thin film, due to its low loss (tanδ ~0.01 at 1 MHz), satisfied temperature stability (TCC ~−68 ppm/°C, from −55 °C to 205 °C), high withstand voltage (>160 V), and small leakage current density (about 3.34 × 10⁻⁶ A/cm² at operating voltage of 160 V). This may be useful for capacitor materials in the next generation of portable electronic systems.

【 授权许可】

Unknown