An Analysis of Fill Factor Loss Depending on the Temperature for the Industrial Silicon Solar Cells

Energies

Yoonmook Kang¹  Hae-Seok Lee¹  Donghwan Kim²  Taejun Kim³  Sungeun Park⁴  Hee-eun Song⁴  Kwan Hong Min⁴  Min Gu Kang⁴  Sang Hee Lee⁴ 

[1] Department of Energy Environment Policy and Technology, Green School, Graduate School of Korea Energy and Environment, Korea University, Seoul 02841, Korea;Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea;Hyundai Energy Solutions, PV R&D center, Eumseong, Cheongju 27711, Korea;Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea;

关键词: fill factor loss analysis;    double-diode model;    PERC;    temperature dependence;    recombination current density;    parasitic resistance;   

DOI  :  10.3390/en13112931

来源: DOAJ

【 摘 要 】

Since the temperature of a photovoltaic (PV) module is not consistent as it was estimated at a standard test condition, the thermal stability of the solar cell parameters determines the temperature dependence of the PV module. Fill factor loss analysis of crystalline silicon solar cell is one of the most efficient methods to diagnose the dominant problem, accurately. In this study, the fill factor analysis method and the double-diode model of a solar cell was applied to analyze the effect of J₀₁, J₀₂, R_s, and R_sh on the fill factor in details. The temperature dependence of the parameters was compared through the passivated emitter rear cell (PERC) of the industrial scale solar cells. As a result of analysis, PERC cells showed different temperature dependence for the fill factor loss of the J₀₁ and J₀₂ as temperatures rose. In addition, we confirmed that fill factor loss from the J₀₁ and J₀₂ at elevated temperature depends on the initial state of the solar cells. The verification of the fill factor loss analysis was conducted by comparing to the fitting results of the injection dependent-carrier lifetime.

【 授权许可】

Unknown