The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2

Crystals

Rong Yang¹  Jing Zhao¹  Xiaobo Lu¹  Shuang Wu¹  Guole Wang¹  Dongxia Shi¹  Jianling Meng¹  Mengzhou Liao¹  Jing Zhang¹  Shuopei Wang¹  Peng Chen¹  Li Xie¹  Jianqi Zhu¹  Hua Yu¹  Guangyu Zhang¹  Luojun Du² 

[1] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Department of Physics, Renmin University of China, Beijing 100872, China;

关键词: molybdenum disulphide;    chemical vapor deposition;    twin grain boundary;    variable-range hopping;    nearest-neighbour hopping;   

DOI  :  10.3390/cryst6090115

来源: DOAJ

【 摘 要 】

Theoretical calculation and experimental measurement have shown that twin grain boundary (GB) of molybdenum disulphide (MoS2) exhibits extraordinary effects on transport properties. Precise transport measurements need to verify the transport mechanism of twin GB in MoS2. Here, monolayer molybdenum disulphide with a twin grain boundary was grown in our developed low-pressure chemical vapor deposition (CVD) system, and we investigated how the twin GB affects the electrical transport properties of MoS2 by temperature-dependent transport studies. At low temperature, the twin GB can increase the in-plane electrical conductivity of MoS2 and the transport exhibits variable-range hopping (VRH), while at high temperature, the twin GB impedes the electrical transport of MoS2 and the transport exhibits nearest-neighbor hopping (NNH). Our results elucidate carrier transport mechanism of twin GB and give an important indication of twin GB in tailoring the electronic properties of MoS2 for its applications in next-generation electronics and optoelectronic devices.

【 授权许可】

Unknown