Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Radioengineering

关键词: Memory element;    memristor;    pinched hysteresis loop;   

DOI  :  

来源: DOAJ

【 摘 要 】

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.

【 授权许可】

Unknown