Synthesis and Characteristics of Zn-Doped CuCrO2 Transparent Conductive Thin Films

Coatings

Chen Chu¹  Ruei-Sung Yu¹ 

[1] Department of Photonics and Communication Engineering, Asia University, 500 Lioufeng Rd., Wufeng, Taichung 41354, Taiwan;

关键词: CuCrO₂;    zinc-doped;    thin film;    structure;    optoelectronic properties;   

DOI  :  10.3390/coatings9050321

来源: DOAJ

【 摘 要 】

The effects of doping a p-type CuCrO₂ film with zinc on its structural and optoelectronic properties were investigated by experiments using CuCr_1−xZn_xO₂ thin films (x = 0, 0.025, 0.065, 0.085). An increase in the amount of zinc dopant in the thin films affected the lattice constant and increased its Gibbs free energy of phase transformation. Cross-sectional images of the CuCrO₂ thin film samples exhibited a dense polygonal microstructure and a surface morphology with protruding nanoscale granules. With the increase in the amount of Zn dopant, the surface roughness decreased, thereby increasing the amount of incident photons as well as the visible-light transmittance and ultraviolet-light absorption of the thin films. With the zinc doping in the CuCrO₂ thin films, the band gap increased from 3.09 to 3.11 eV. The substitution of Cr³⁺ with Zn²⁺ forms hole carriers in the crystals, which was demonstrated by X-ray photoelectron spectroscopy and Hall effect measurements. The conductivities and carrier concentrations of the Zn-doped CuCrO₂ thin films were greater than those of undoped CuCrO₂. The CuCr_1−xZn_xO₂ film (x = 0.065) exhibited the best optoelectronic properties; its carrier concentration and resistivity were 1.88 × 10¹⁷ cm⁻³ and 3.82 Ωcm, respectively.

【 授权许可】

Unknown