Flexoelectricity in dielectrics: Materials, structures and characterizations

Journal of Advanced Dielectrics

Shujin Huang¹  Lu Qi¹  Xiaoning Jiang¹  Longlong Shu²  Wenbin Huang³  Shenjie Zhou⁴ 

[1] Mechanial and Aerospace Engineering, North Carolina State University, Raleigh, NC 27695, USA;School of Materials Science and Engineering, Nanchang University, Nanchang 330000, P. R. China;School of Mechanical Engineering, Chongqing University, Chongqing 400044, P. R. China;School of Mechanical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China;

关键词: Flexoelectricity;    dielectrics;    semiconductor;    thermal dependence;    health monitoring;   

DOI  :  10.1142/S2010135X18300025

来源: DOAJ

【 摘 要 】

Flexoelectricity in dielectrics suggests promising smart structures for sensors, actuators and transducers. In this review, dielectric materials, structures and the associated flexoelectric characterization methods are presented. First of all, we review structures and methods to measure different flexoelectric coefficients, including μ1122,μ1111,μ1211,μ3121,μ2312,μ1123, etc., via direct or converse flexoelectric effect. The flexoelectric materials in the form of bulk, thin films and 2D materials and the reported flexoelectric properties of these dielectrics will then be discussed. Semiconductor materials and the associated flexoelectric studies will also be reviewed. The progress of flexoelectric device study will next be presented, followed by the flexoelectricity research challenges and future trend.

【 授权许可】

Unknown