Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics

Applied Sciences

Yinchao Zhao¹  Chengmurong Ding²  Wen Liu²  Huiqing Wen²  Fan Li²  Yubo Wang²  Ang Li²  Miao Cui²  Weisheng Wang²  Yuhao Zhu² 

[1] Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK;School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China;

关键词: AlGaN/GaN MIS-HEMT;    monolithic comparator circuit;    static and dynamic tests;    high-temperature stability;   

DOI  :  10.3390/app112412057

来源: DOAJ

【 摘 要 】

Monolithic GaN High Electron Mobility Transistor (HEMT)-integrated circuits are a promising application of wide band-gap materials. To date, most GaN-based devices behave as NMOS-like transistors. As only NMOS GaN HEMT is currently commercially available, its control circuit requires special design if monolithic integration is desired. This article analyzes the schematics of a GaN-based comparator, and three comparator structures are compared through ADS simulation. The optimal structure with the bootstrapped technique is fabricated based on AlGaN/GaN Metal–Insulator–Semiconductor (MIS) HEMT with the recessed gate method. The comparator has excellent static characteristics when the reference voltage increases from 3 V to 8 V. Dynamic waveforms from 10 kHz to 1 MHz are also obtained. High-temperature tests from 25 ${}^{°}$C to 250 ${}^{°}$C are applied upon both DC and AC characteristics. The mechanisms of instability issues are explained under dynamic working condition. The results prove that the comparator can be used in the state-of-art mixed-signal circuits, demonstrating the potential for the monolithic all-GaN integrated circuits.

【 授权许可】

Unknown