Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics

So-Young Bak¹  Moonsuk Yi¹  SeHyeong Lee¹  Ye-Ji Han²  Tae-Hee Han²  Sangwoo Kim² 

[1] Department of Electronics Engineering, Pusan National University, Busan 46241, Korea;Department of Smart Interdisciplinary Engineering, Pusan National University, Busan 46241, Korea;

关键词: amorphous oxide semiconductor;    thin-film transistor;    zinc tin oxide;    solution process;    self-combustion reaction;    flexible electronics;   

DOI  :  10.3390/electronics10091099

来源: DOAJ

【 摘 要 】

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μ_sat of 4.72 cm²/V∙s, V_th of −1.28 V, SS of 0.86 V/decade, and I_ON/_OFF of 1.70 × 10⁶ at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

【 授权许可】

Unknown