Fabrication and electrical properties of BNT-based lead-free ferroelectric thin film with the composition around the morphotropic phase boundary

Journal of Shanghai Normal University (Natural Sciences)

SHI Wangzhou¹  YAO Qirong¹  JIN Chengchao¹  WANG Feifei¹ 

[1] College of Mathematics and Sciences,Shanghai Normal University;

关键词: lead-free thin film;    PLD;    dielectric;    ferroelectric;   

DOI  :  

来源: DOAJ

【 摘 要 】

Development of ferroelectric and piezoelectric thin films for environmentalfriendly sensors,memories and transducers applications is one of the current hot research topics.In present work,La_0.6Sr_0.4CoO₃-buffered Mndoped (Bi_0.5Na_0.5)TiO₃-BaTiO₃ thin film with the composition around the morphotropic phase boundary was grown on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition.Structure,ferroelectric and dielectric properties of the leadfree thin film were systematically investigated.Results indicate that the film exhibites polycrystalline and dense microstructure.Good ferroelectric and dielectric properties with the average remnant polarization P_r of 1.15×10^-1C/m² and dielectric constant ε^T₃₃/ε₀ of about 1000under 1 kHz are obtained.

【 授权许可】

Unknown