Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature

IEEE Journal of the Electron Devices Society

Takuya Saraya¹  Shohei Sekiguchi¹  Masaharu Kobayashi¹  Min-Ju Ahn¹  Tomoko Mizutani¹  Toshiro Hiramoto¹ 

[1] Institute of Industrial Science, The University of Tokyo, Tokyo, Japan;

关键词: Nanowire;    MOSFET;    subthreshold swing;   

DOI  :  10.1109/JEDS.2021.3108854

来源: DOAJ

【 摘 要 】

Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 4 K. A fully depleted (FD) SOI MOSFET is also evaluated. The values of SS of both transistors decrease in proportional to temperature (T) but start to saturate below 18K, similar to transistors with non-zero body factor in the literature, indicating that the body factor is not related to the SS saturation phenomena at very low temperatures.

【 授权许可】

Unknown