High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors

Applied Sciences

Komei Tazawa¹  Seiichiro Kobayashi¹  Tatsuma Saito¹  Kazufumi Tanaka²  Takanobu Akagi²  Tetsuya Takeuchi²  Masaru Kuramoto² 

[1] D Laboratories, Stanley Electric Co., Ltd., 1-3-1 Edanishi, Aoba-ku, Yokohama 225-0014, Japan;;R&

关键词: GaN-based VCSEL;    AlInN/GaN DBR;    lateral optical guide;    internal loss;    differential quantum efficiency;    thermal resistance;    small divergence angle;   

DOI  :  10.3390/app9030416

来源: DOAJ

【 摘 要 】

High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN distributed Bragg reflectors. The high-efficiency performance was achieved by introducing a novel SiO₂-buried lateral index guide and adjusting the front mirror reflectivity. Lateral optical confinement has been shown to greatly lower the otherwise significant loss of transverse radiation exhibited by typical VCSELs based on GaN. Employing a long (10λ) cavity can also enhance the output power, by lowering the thermal resistance of the VCSEL and increasing the operating current associated with thermal rollover. This modification, in conjunction with optimized front mirror reflectivity and a buried SiO₂ lateral index guide, results in a blue VCSEL (in the continuous wave mode with an 8 μm aperture at 20 °C) having a superior differential quantum efficiency value of 31% and an enhanced 15.7 mW output power. This unit also exhibits a relatively high output power of 2.7 mW at temperatures as high as 110 °C. Finally, a 5.5 μm aperture VCSEL was found to generate a narrow divergence (5.1°) single-lobe far field pattern when operating at an output power of approximately 5 mW.

【 授权许可】

Unknown