Refractive Index Profile in Photorefractive-Damage-Resistant Near-Stoichiometric Ti:Mg:Er: $\hbox{LiNbO}_{3}$ Strip Waveguide

IEEE Photonics Journal

Shi-Yu Xu¹  Edwin Yue-Bun Pun²  Ping-Rang Hua³  Bei Chen³  De-Long Zhang³  Dao-Yin Yu³ 

[1] $^{1}$School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, China;Department of Electronic Engineering, City University of Hong Kong , Kowloon, Hong Kong;School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin, China;

关键词: Near-stoichiometric (NS) Ti:Mg:Er:$\hbox{LiNbO}_{3}$ waveguide;    refractive index profile;    mode field distribution;    variational method;   

DOI  :  10.1109/JPHOT.2012.2217736

来源: DOAJ

【 摘 要 】

Refractive index profile in photorefractive-damage-resistant near-stoichiometric (NS) single-mode Ti:Mg:Er: $\hbox{LiNbO}_{3}$ strip waveguide is constructed from the measured mode field distribution. Like the conventional congruent Ti:$ \hbox{LiNbO}_{3}$ waveguide, the Ti-induced refractive index increase in the NS waveguide studied here follows a sum of two error functions in the width direction and a Gaussian function in the depth direction. Based upon the established index profile model, the mode sizes were calculated using the variational method and compared with the experimental results. The Ti-induced index increment at the NS waveguide surface was also evaluated according to the empirical relation previously reported for the conventional congruent Ti: $\hbox{LiNbO}_{3}$ waveguide and compared with the data deduced from the mode field distribution. All comparisons show good agreement, showing that the index model proposed is close to the practical scenario.

【 授权许可】

Unknown