300 mm Large Area Wire Grid Polarizers with 50 nm Half-Pitch by ArF Immersion Lithography

Nanomaterials

卷:12

Ga-Won Lee¹  Jungchul Song²  Min Jun Bak²  Jae Sub Oh²  Il-Suk Kang²  Sung Jung Lee³ 

[1] Division of Electronics Engineering, Chungnam National University, Yusung-gu, Daejeon 34134, Korea;

[2] Office of Nano Convergence Technology, National NanoFab Center, Daejeon 34141, Korea;

[3] Office of Research and Development, Pavonine Korea, Inc., 33, Hogupo-ro, Namdong-gu, Incheon 21693, Korea;

关键词: ArF immersion;    wire grid polarizer;    flare;    OPC;    LFC;    stitching;   

DOI  :  10.3390/nano12030481

来源: DOAJ

【 摘 要 】

The large area wire grid polarizers (LA-WGPs) with 50 nm half-pitch were fabricated using ArF immersion lithography overcoming the limit of the shot field size. To realize the 50 nm line and space patterns on a 300 mm wafer, a zero-distance stitching process that connects the shot fields is suggested. To compensate for mutual interference between the shot fields which is called the local flare effect (LFE), the shot field arrangement is changed with optical proximity correction (OPC). Using a master wafer produced by the suggested method, 300 mm large-area WGPs were fabricated by the nano-imprint process. The WGPs have more than 80% transmittance in the visible light region, and the possibility of performance improvement can be confirmed depending on the number and method of the etch process.

【 授权许可】

Unknown