Comparison Study of Wide Bandgap Polymer (PBDB-T) and Narrow Bandgap Polymer (PBDTTT-EFT) as Donor for Perylene Diimide Based Polymer Solar Cells

Frontiers in Chemistry

卷:6

Chuanlang Zhan¹  Xin Zhang¹  Changhao Tian²  Tengling Ye²  Cong Kang²  Shan Jin²  Zhipeng Kan³  Shirong Lu³ 

[1] Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China;

[2] MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, China;

[3] Organic Semiconductor Research Center, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China;

关键词: polymer solar cells;    perylene diimide;    charge transport;    charge recombination;    non-fullerene;    wide bandgap;   

DOI  :  10.3389/fchem.2018.00613

来源: DOAJ

【 摘 要 】

Perylene diimide (PDI) derivatives as a kind of promising non-fullerene-based acceptor (NFA) have got rapid development. However, most of the relevant developmental work has focused on synthesizing novel PDI-based structures, and few paid attentions to the selection of the polymer donor in PDI-based solar cells. Wide bandgap polymer (PBDB-T) and narrow bandgap polymer (PBDTTT-EFT) are known as the most efficient polymer donors in polymer solar cells (PSCs). While PBDB-T is in favor with non-fullerene acceptors achieving power conversion efficiency (PCE) more than 12%, PBDTTT-EFT is one of the best electron donors with fullerene acceptors with PCE up to 10%. Despite the different absorption profiles, the working principle of these benchmark polymer donors with a same electron acceptor, specially PDI-based acceptors, was rarely compared. To this end, we used PBDB-T and PBDTTT-EFT as the electron donors, and 1,1′-bis(2-methoxyethoxyl)-7,7′-(2,5-thienyl) bis-PDI (Bis-PDI-T-EG) as the electron acceptor to fabricate PSCs, and systematically compared their differences in device performance, carrier mobility, recombination mechanism, and film morphology.

【 授权许可】

Unknown