High-Density SRAM Read Access Yield Estimation Methodology

IEEE Access

卷:9

Gidong Baek¹  Hanwool Jeong¹ 

[1] Department of Electronic Engineering, Kwangwoon University, Seoul, South Korea;

关键词: Process variation;    read access yield;    sensing yield;    static random access memory (SRAM);    yield estimation;   

DOI  :  10.1109/ACCESS.2021.3111762

来源: DOAJ

【 摘 要 】

As high-density SRAMs must be designed to ensure a substantially small failure rate, the accurate yield estimation with practically acceptable runtime of circuit simulations is highly challenging. Here, a read access yield estimation method for high-density static random access memory (SRAM) is proposed. Instead of performing SPICE runs for the entire SRAM circuit, the proposed method partitions the SRAM into three parts—the control signal generation circuit, bitcell array, and sense amplifier (SA)—that determine three key parameters: word-line to SA enable delay, bit-line voltage difference, and SA offset voltage. Subsequently, the proposed method derives the probability density of these key parameters from each of the three partitioned circuits. Here, different methods are applied to derive the probability of the key parameters, considering the respective characteristics of each circuit part and parameter. According to our experimental results, the proposed method can accelerate the yield estimation by 500– $3000\times $ , compared with the brute-force Monte Carlo simulation method, and 10– $100\times $ compared with the other state-of-art methods. In addition, the proposed method can accelerate the circuit optimization procedure accompanied by multiple circuit revisions, that is, the circuit revisions can be reflected with SPICE runs only for the revised circuit part, unlike the previous methods that require SPICE runs for the entire SRAM.

【 授权许可】

Unknown