In Situ Recrystallization of Co-Evaporated Cu(In,Ga)Se2 Thin Films by Copper Chloride Vapor Treatment towards Solar Cell Applications

Energies

卷:14

Angus Rockett¹  Elizabeth Palmiotti¹  Thomas Lepetit²  Sylvain Marsillac³  Benjamin Belfore³  Tasnuva Ashrafee³  Grace Rajan³  Shankar Karki³  Deewakar Poudel³ 

[1] Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401, USA;

[2] Institut des Materiaux Jean Rouxel, Universite de Nantes, 44322 Nantes, France;

[3] Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USA;

关键词: copper indium gallium selenide;    metal halide;    recrystallization;    solar cell;   

DOI  :  10.3390/en14133938

来源: DOAJ

【 摘 要 】

Cu(In,Ga)Se₂ (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates and a low temperature during the process, a copper chloride vapor treatment was introduced in between the second and third stages to enhance the films properties. X-ray diffraction and scanning electron microscopy demonstrate that drastic changes occur after this recrystallization process, yielding films with much larger grains. Secondary ion mass spectrometry shows that the depth profile of many elements is not modified (such as Cu, In and Se) while others change dramatically (such as Ga and Na). Because of the competing effects of these changes, not all parameters of the solar cells are enhanced, yielding an increase of 15% in the device efficiency at the most.

【 授权许可】

Unknown