Selective Wet-Etching of Polymer/Fullerene Blend Films for Surface- and Nanoscale Morphology-Controlled Organic Transistors and Sensitivity-Enhanced Gas Sensors

Polymers

卷:11

MinSoo Park¹  FelixSunjoo Kim¹  AlemAraya Meresa¹  Chan-Min Kwon¹ 

[1] School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 06974, Korea;

关键词: polymer blend;    selective etching process;    morphology;    organic thin-film transistor;    chemical sensor;   

DOI  :  10.3390/polym11101682

来源: DOAJ

【 摘 要 】

Surface and nanoscale morphology of thin poly(3-hexylthiophene) (P3HT) films are effectively controlled by blending the polymer with a soluble derivative of fullerene, and then selectively dissolving out the fullerene from the blend films. A combination of the polymer blending with fullerene and a use of diiodooctane (DIO) as a processing additive enhances the molecular ordering of P3HT through nanoscale phase separation, compared to the pristine P3HT. In organic thin-film transistors, such morphological changes in the blend induce a positive effect on the field-effect mobility, as the mobility is ~5−7 times higher than in the pristine P3HT. Simple dipping of the blend films in butyl acetate (BA) causes a selective dissolution of the small molecular component, resulting in a rough surface with nanoscale features of P3HT films. Chemical sensors utilizing these morphological features show an enhanced sensitivity in detection of gas-phase ammonia, water, and ethanol.

【 授权许可】

Unknown