Biaxial versus uniaxial strain tuning of single-layer MoS2

Nano Materials Science

卷:4

Andres Castellanos-Gomez¹  Riccardo Frisenda²  Felix Carrascoso³ 

[1] Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), 28049, Madrid, Spain;

[2] Corresponding author.;

关键词: 2D materials;    MoS2;    Strain engineering;    biaxial strain;    uniaxial strain;    reflectance spectra;   

DOI  :  

来源: DOAJ

【 摘 要 】

Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would be more effective than uniaxial strain to tune the band structure of MoS2, a direct experimental verification is still missing in the literature. Here we implemented a simple experimental setup that allows to apply biaxial strain through the bending of a cruciform polymer substrate. We used the setup to study the effect of biaxial strain on the differential reflectance spectra of 12 single-layer MoS2 flakes finding a redshift of the excitonic features at a rate between −40 meV/% and −110 meV/% of biaxial tension. We also directly compare the effect of biaxial and uniaxial strain on the same single-layer MoS2 finding that the biaxial strain gauge factor is 2.3 times larger than the uniaxial strain one.

【 授权许可】

Unknown