High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration

IEEE Journal of the Electron Devices Society

卷:7

Guijun Li¹  Fion Sze Yan Yeung²  Hoi-Sing Kwok²  Sunbin Deng²  Rongsheng Chen³  Wei Zhong³  Zhijian Chen³  Shufeng Weng⁴  Linfeng Lan⁴ 

[1] College of Electronic Science and Technology, Shenzhen University, Shenzhen, China;

[2] Department of Electronic and Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology, Hong Kong;

[3] School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China;

[4] School of Material Science and Engineering, South China University of Technology, Guangzhou, China;

关键词: Sputtering;    thin-film transistor (TFT);    zinc tin oxide (ZTO);   

DOI  :  10.1109/JEDS.2019.2919424

来源: DOAJ

【 摘 要 】

In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm²/ $\text{V}\cdot \text{s}$ , a high $\text{I}_{\mathrm{ on/off}}$ ratio of over $10^{8}$ , a subthreshold swing of 0.17 V/decade, and a turn-on voltage of −0.4 V, even with an Sn concentration of only 11.95%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only −0.4 V.

【 授权许可】

Unknown