Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO4/H2SO4 Solution

Crystals

卷:12

Ki-Sik Im¹  Yeo-Jin Choi²  Tae-Kyun Lee²  Jin-Seok Choi²  Sung-Jin An² 

[1] Advanced Materials Research Center, Kumoh National Institute of Technology, Gumi 39177, Korea;

[2] Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea;

关键词: graphene;    oxidized graphene;    oxygen functional groups;    potassium permanganate;    sulfuric acid;   

DOI  :  10.3390/cryst12040439

来源: DOAJ

【 摘 要 】

We report the electrical properties of graphene grown via chemical vapor deposition (CVD-graphene) and oxidized using a KMnO₄/dilute H₂SO₄ mixture. CVD-graphene was successfully oxidized without any pores or peeling off from the substrates. When the H₂SO₄ concentration was increased, the electrical resistance of the oxidized graphene (OG) increased. In particular, OG-20 shows a nonlinear current–voltage curve similar to that of a diode owing to direct tunneling through the interfaces between the nanosized sp² and sp³ regions. The changes in electrical properties occurred because of structural evolution. As the H₂SO₄ concentration increased, the number of oxygen functional groups (epoxide/hydroxyl and carboxyl groups) in the OG increased. In addition, a reduction in the average distance between defects in the OG was determined using Raman spectroscopy. Oxidation using a KMnO₄/dilute H₂SO₄ mixture results in CVD-graphene with modified electrical properties for graphene-based applications.

【 授权许可】

Unknown