Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser

Applied Sciences

卷:8

Yichao Xu¹  Jun Zou²  Xiaoyan Lin²  Bobo Yang²  Wenjuan Wu²  Mingming Shi²  Wenbo Li³ 

[1] School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China;

[2] School of Sciences, Shanghai Institute of Technology, Shanghai 201418, China;

[3] Zhejiang Emitting Optoelectronic Technology Co., Ltd., Jiaxing 314100, China;

关键词: GaN (gallium nitride);    MOCVD (metal-organic chemical vapor deposition);    patterned sapphire substrate;    laser ablation;   

DOI  :  10.3390/app8101842

来源: DOAJ

【 摘 要 】

In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) epilayers. The striped grooves of patterned sapphire substrate are ablated by femtosecond laser. After the process of metal-organic chemical vapor deposition (MOCVD) method, the c-plane GaN epitaxial layers grown on striped PSS have larger crystallite size, which brings much less crystal boundary. There is much less compressive stress between the GaN crystals which improves the smoothness and compactness of GaN epilayers. This result demonstrates a significant improvement in the crystallinity of the c-plane GaN epitaxial layers grown on striped PSS.

【 授权许可】

Unknown