Application of Artificial Neural Networks in Crystal Growth of Electronic and Opto-Electronic Materials

Crystals

卷:10

Martin Holena¹  Natasha Dropka² 

[1] Leibniz Institute for Catalysis, Albert-Einstein-Str. 29A, 18069 Rostock, Germany;

[2] Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany;

关键词: artificial neural networks;    crystal growth;    semiconductors;    oxides;   

DOI  :  10.3390/cryst10080663

来源: DOAJ

【 摘 要 】

In this review, we summarize the results concerning the application of artificial neural networks (ANNs) in the crystal growth of electronic and opto-electronic materials. The main reason for using ANNs is to detect the patterns and relationships in non-linear static and dynamic data sets which are common in crystal growth processes, all in a real time. The fast forecasting is particularly important for the process control, since common numerical simulations are slow and in situ measurements of key process parameters are not feasible. This important machine learning approach thus makes it possible to determine optimized parameters for high-quality up-scaled crystals in real time.

【 授权许可】

Unknown