Effect of In-Incorporation and Annealing on CuxSe Thin Films

Materials

卷:14

Remigijus Ivanauskas¹  Ingrida Ancutiene¹  Algimantas Ivanauskas¹ 

[1] Department of Physical and Inorganic Chemistry, Faculty of Chemical Technology, Kaunas University of Technology, 44249 Kaunas, Lithuania;

关键词: SILAR;    selenium;    copper selenide;    indium selenide;   

DOI  :  10.3390/ma14143810

来源: DOAJ

【 摘 要 】

A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with copper(II/I) ions, incorporation of indium(III), and annealing in an inert nitrogen atmosphere. The elemental and phasal composition, as well as the morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu_0.87Se, In₂Se₃, and CuInSe₂. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28–1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors.

【 授权许可】

Unknown