Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer

IEEE Journal of the Electron Devices Society

卷:7

Yi Wang¹  Dedong Han¹  Jian Cai¹  Shuaipeng Wang²  Tiantian Wei²  Dongyan Zhao²  Yubo Wang²  Yidong Yuan²  Wen Yu²  Yanning Chen²  Zhen Fu²  Haifeng Zhang² 

[1] Institute of Microelectronics, Peking University, Beijing, China;

[2] State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Company, Ltd., Beijing, China;

关键词: Titanium-doped zinc oxide;    thin film transistors;    dual-layer channel;    interlayer thickness;    oxygen vacancy;   

DOI  :  10.1109/JEDS.2019.2951738

来源: DOAJ

【 摘 要 】

In order to explore the influence of interlayer between dielectric layer and channel layer on performance of thin film transistors (TFTs), the single layer titanium doped zinc oxide (TiZO) TFTs and the dual layer indium tin oxide (ITO)/TiZO TFTs were fabricated successfully in this work. The effects of interlayer thickness on the performance of TFTs were studied and the optimal thickness condition was obtained. The experimental results indicate that the introduction of interlayer contributes to the improvement of TFT characteristics. In addition, the dual-layer ITO/TiZO TFTs also present a good uniformity, which is suitable for large-area display applications.

【 授权许可】

Unknown