Development of SnO2 Composites as Electron Transport Layer in Unencapsulated CH3NH3PbI3 Solar Cells

Solids

卷:2

Michele Pavone¹  Ana B. Muñoz-García²  Adriana Pecoraro²  Gabriella Rametta³  Laura Lancellotti³  Vera La Ferrara³  Maria Luisa Addonizio³  Paola Delli Veneri³  Lucia V. Mercaldo³  Gennaro V. Sannino³  Antonella De Maria³ 

[1] Department of Chemical Sciences, Complesso Universitario Monte Sant’Angelo, University of Naples Federico II, Via Cintia 21, 80126 Naples, Italy;

[2] Department of Physics “Ettore Pancini”, Complesso Universitario Monte Sant’Angelo, University of Naples Federico II, Via Cintia 21, 80126 Naples, Italy;

[3] Portici Research Center—Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Piazzale E. Fermi, 80055 Portici, Italy;

关键词: electron transport layer;    tin dioxide;    composites;    perovskite solar cell;    interfaces;   

DOI  :  10.3390/solids2040026

来源: DOAJ

【 摘 要 】

Improving morphological and electronic properties of the electron transport layer (ETL) is a critical issue to fabricate highly efficient perovskite solar cells. Tin dioxide is used as an ETL for its peculiarities such as low-temperature solution-process and high electron mobility and several handlings have been tested to increase its performances. Herein, SnO₂:ZnO and SnO₂:In₂O₃ composites are studied as ETL in planar n-i-p CH₃NH₃PbI₃ solar cells fabricated in ambient air, starting from glass/ITO substrates. Morphological, electrical and optical properties of zinc- and indium-oxide nanoparticles (NPs) are investigated. First-principle calculations are also reported and help to further explain the experimental evidences. Photovoltaic performances of full devices show an improvement in efficiency for SnO₂:In₂O₃–based solar cells with respect to pristine SnO₂, probably due to a suppression of interfacial charge recombination between ITO/ETL and ETL/perovskite. Moreover, a better homogeneity of SnO₂:In₂O₃ deposition with respect to SnO₂:ZnO composites, conducts an increase in perovskite grain size and, consequently, the device performances.

【 授权许可】

Unknown