Controllable Vapor Growth of Large-Area Aligned CdS x Se1−x Nanowires for Visible Range Integratable Photodetectors

Nano-Micro Letters

卷:10

Qinglin Zhang¹  Xuehong Zhang¹  Xiaoxia Wang¹  Muhammad Shoaib¹  Anlian Pan¹ 

[1] Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University;

关键词: Graphoepitaxial effect;    Bandgap engineering;    CdS x Se1−x nanowires;    Optical waveguide;    Photodetectors;   

DOI  :  10.1007/s40820-018-0211-7

来源: DOAJ

【 摘 要 】

Abstract The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS x Se1−x nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS x Se1−x NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS x Se1−x NWs possess smooth surface and uniform diameter. The aligned CdS x Se1−x NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS x Se1−x NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670 A W−1 and photoresponse time ~ 76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits.

【 授权许可】

Unknown