Design of Distributed Bragg Reflectors for Green Light-Emitting Devices Based on Quantum Dots as Emission Layer

Energies

卷:15

Swelm Wageh¹  Ahmed S. Samra²  Iman E. Shaaban²  Shabbir Muhammad³ 

[1] Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80200, Jeddah 21589, Saudi Arabia;

[2] Electronics and Communications Department, Faculty of Engineering, Mansoura University, Mansoura 35516, Egypt;

[3] Research Center for Advanced Materials Science (RCAMS), King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia;

关键词: Zn (Te, Se) alloy quantum dot;    organic light-emitting devices;    green emission;    distributed Bragg reflector;   

DOI  :  10.3390/en15031237

来源: DOAJ

【 摘 要 】

Light-emitting diodes based on quantum dots as an active emission can be considered as a promising next generation for application in displays and lighting. We report a theoretical investigation of green emission at 550 nm of microcavity inorganic–organic light-emitting devices based on Zn (Te, Se) alloy quantum dots as an active layer. Distributed Bragg Reflector (DBR) has been applied as a bottom mirror. The realization of high-quality DBR consisting of both high and low refractive index structures is investigated. The structures applied for high refractive index layers are (ZrO₂, SiN_x, ZnS), while those applied for low index layers are (Zr, SiO₂, CaF₂). DBR of ZnS/CaF₂ consisting of three pairs with a high refractive index step of ($\Delta n$ = 0.95) revealed a broad stop bandwidth (178 nm) and achieved a high reflectivity of 0.914.

【 授权许可】

Unknown