期刊论文详细信息
Surfaces 卷:3
In Situ Monitoring of Growth of Vertically Stacked h-BN/Graphene Heterostructures on Ni Substrates and Their Interface Interaction
Qiang Fu1  Guanhua Zhang2  Yi Cui3  Wei Wei3  Jiaqi Pan3 
[1] State Key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, the Chinese Academy of Sciences, Dalian 116023, China;
[2] State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, the Chinese Academy of Sciences, Dalian 116023, China;
[3] Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano–Tech and Nano-Bionics, the Chinese Academy of Sciences, Suzhou 215123, China;
关键词: hexagonal boron nitride (h-BN);    graphene;    vertical heterostructures;    interface interaction;   
DOI  :  10.3390/surfaces3030024
来源: DOAJ
【 摘 要 】

Vertically stacked hexagonal boron nitride (h-BN)/graphene heterostructures present potential applications in electronic, photonic, and mechanical devices, and their interface interaction is one of the critical factors that affect the performances. In this work, the vertical h-BN/graphene heterostructures with high coverage are synthesized by chemical vapor deposition (CVD) of h-BN on Ni substrates followed by segregation growth of graphene at the h-BN/Ni interfaces, which are monitored by in situ surface microscopy and surface spectroscopy. We find that h-BN overlayers can be decoupled from Ni substrates by the graphene interlayers. Furthermore, the h-BN domain boundaries exhibit a confinement effect on the graphene interlayer growth and the lower graphene domains are limited within the upper h-BN domains. This work provides new insights into the formation mechanism and interface interaction of the vertical heterostructures.

【 授权许可】

Unknown   

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