Surfaces | 卷:3 |
In Situ Monitoring of Growth of Vertically Stacked h-BN/Graphene Heterostructures on Ni Substrates and Their Interface Interaction | |
Qiang Fu1  Guanhua Zhang2  Yi Cui3  Wei Wei3  Jiaqi Pan3  | |
[1] State Key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, the Chinese Academy of Sciences, Dalian 116023, China; | |
[2] State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, the Chinese Academy of Sciences, Dalian 116023, China; | |
[3] Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano–Tech and Nano-Bionics, the Chinese Academy of Sciences, Suzhou 215123, China; | |
关键词: hexagonal boron nitride (h-BN); graphene; vertical heterostructures; interface interaction; | |
DOI : 10.3390/surfaces3030024 | |
来源: DOAJ |
【 摘 要 】
Vertically stacked hexagonal boron nitride (h-BN)/graphene heterostructures present potential applications in electronic, photonic, and mechanical devices, and their interface interaction is one of the critical factors that affect the performances. In this work, the vertical h-BN/graphene heterostructures with high coverage are synthesized by chemical vapor deposition (CVD) of h-BN on Ni substrates followed by segregation growth of graphene at the h-BN/Ni interfaces, which are monitored by in situ surface microscopy and surface spectroscopy. We find that h-BN overlayers can be decoupled from Ni substrates by the graphene interlayers. Furthermore, the h-BN domain boundaries exhibit a confinement effect on the graphene interlayer growth and the lower graphene domains are limited within the upper h-BN domains. This work provides new insights into the formation mechanism and interface interaction of the vertical heterostructures.
【 授权许可】
Unknown