Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene

Nanomaterials

卷:12

Jiyeong Yun¹  Honghwi Park¹  Jonghoo Park¹  Junyeong Lee¹  Hyowoong Noh¹  Youngjin Park¹  Minsu Park¹  Chang-Ju Lee¹  Jaewoon Kang¹  Jonghyung Lee¹  Hongsik Park¹  Muhan Choi¹  Sunghwan Lee² 

[1] School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea;

[2] School of Engineering Technology, Purdue University, West Lafayette, IN 47907, USA;

关键词: CVD graphene;    polycrystalline;    grain size;    single-crystalline grain;    grain boundary (GB);    GB distribution;   

DOI  :  10.3390/nano12020206

来源: DOAJ

【 摘 要 】

The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.

【 授权许可】

Unknown