Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

IEEE Journal of the Electron Devices Society

卷:5

Yi Qu¹  Baoxue Bo¹  Xin Gao¹  Xiaohong Tang²  Xiang Li²  Hong Wang²  Zhongliang Qiao²  Chongyang Liu³ 

[1] National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China;

[2] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore;

[3] Temasek Laboratories@NTU, Nanyang Technological University, Singapore;

关键词: Semiconductor laser;    quantum well intermixing (QWI);    impurity free vacancy disordering (IFVD);    monolithic fabrication;   

DOI  :  10.1109/JEDS.2017.2660531

来源: DOAJ

【 摘 要 】

InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO₂ mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880 °C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip.

【 授权许可】

Unknown