Revisiting the Rate-Dependent Mechanical Response of Typical Silicon Structures via Molecular Dynamics

Nanomaterials

卷:12

Zhenkang Xiong¹  Yi Liu²  Wei Wan²  Changxin Tang²  Lang Zhou²  Quan Li³ 

[1] Department of Science and Technology, Nanchang University College of Science and Technology, Jiujiang 332020, China;

[2] Institute of Photovoltaics, Nanchang University, Nanchang 330031, China;

[3] School of Automotive Application, Hunan Automotive Engineering Vocational College, Zhuzhou 412001, China;

关键词: molecular dynamics;    monocrystalline silicon;    silicon nanowire;    strain rate;    mechanical response;   

DOI  :  10.3390/nano12071203

来源: DOAJ

【 摘 要 】

Strain rate is a critical parameter in the mechanical application of nano-devices. A comparative atomistic study on both perfect monocrystalline silicon crystal and silicon nanowire was performed to investigate how the strain rate affects the mechanical response of these silicon structures. Using a rate response model, the strain rate sensitivity and the critical strain rate of two structures were given. The rate-dependent dislocation activities in the fracture process were also discussed, from which the dislocation nucleation and motion were found to play an important role in the low strain rate deformations. Finally, through the comparison of five equivalent stresses, the von Mises stress was verified as a robust yield criterion of the two silicon structures under the strain rate effects.

【 授权许可】

Unknown