Hydrogenated Amorphous Silicon Microstructuring for 0th-Order Polarization Elements at 1.0–1.1 $\mu\hbox{m}$ Wavelength

IEEE Photonics Journal

卷:3

Svetlen Tonchev¹  Christian Seassal¹  Olivier Parriaux²  Thomas Kampfe³  Guillaume Gomard³ 

[1] de Lyon, Saint-Etienne, France;

[2] Institut des Nanotechnologies de Lyon, UMR CNRS 5270, $^{2}$Universit&x00E9;

[3] Laboratoire Hubert Curien, UMR CNRS 5516, $^{1}$Universit&x00E9;

关键词: Holography;    image analysis;   

DOI  :  10.1109/JPHOT.2011.2175444

来源: DOAJ

【 摘 要 】

Dedicated photolithographic and reactive ion etching processes applied to the plasma-enhanced chemical vapor deposition (PECVD) hydrogenated amorphous silicon layers of solar cells have been developed in the objective of the low-cost manufacturing of efficient, depth-limited subwavelength gratings transforming a linearly polarized beam into a radially and azimuthally polarized beam in the 1.0-1.1-μm wavelength range.

【 授权许可】

Unknown