Influence of Parasitic Effects in Negative Differential Resistance Characteristics of Resonant Tunneling

Electronics

卷:8

ChihChin Yang¹ 

[1] Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung City 81157, Taiwan;

关键词: negative differential resistance;    parasitic effect;    resonant tunneling;    peak-to-valley current ratio;    current density;   

DOI  :  10.3390/electronics8060673

来源: DOAJ

【 摘 要 】

A resonant tunneling electronic circuit (RTEC) with high and multiple peak-to-valley current density ratios (PVCDRs) exhibited in the negative differential resistance (NDR) curve has been proposed in this research. The PVCDR values in simulating research and experimental research of double PVCDR RTEC were respectively reached as high as 1.79 and 22 in average, which were obtained using the designed single PVCDR RTECs structure. Also, the peak current density (PCD) values of the last NDR in the double PVCDR RTEC structure in the simulation and experiment were respectively 1.85 A and 42 µA. Triple NDR characteristics also had been obtained with the PCD values reaching as high as 2.9 A and 46 µA, respectively, in simulating and experimental researches. The PVCDR values of triple NDR characteristic were respectively 1.5 and 4.6 in the simulation and experiment.

【 授权许可】

Unknown