Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology

Nanoscale Research Letters

Jonathan Chang¹  Yue-Der Chih¹  Jiaw-Ren Shih²  Chrong Jung Lin²  Chien-Ping Wang²  Ya-Chin King²  Burn Jeng Lin³  Pin-Jiun Wu⁴ 

[1] Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan;Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan;Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan;National Synchrotron Radiation Research Center, Hsinchu, Taiwan;

关键词: Extreme ultraviolet (EUV);    Detectors;    FinFET CMOS technologies;   

DOI  :  10.1186/s11671-021-03645-5

来源: Springer

【 摘 要 】

An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node for days, enabling off-line and non-destructive reading. The high spatial resolution micro-detectors can be used to extract the actual parameters of the incident EUV on wafers, including light intensity, exposure time and energy, key to optimization of lithographic processes in 5 nm FinFET technology and beyond.

【 授权许可】

CC BY