Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Nano-Micro Letters

Zhong Lin Wang¹  Chenguang He²  Zhitao Chen²  Longfei He²  Kang Zhang²  Xin Chen³  Jianqi Dong³  Xingfu Wang³  Shuti Li³ 

[1] Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083, Beijing, People’s Republic of China;School of Materials Science and Engineering, Georgia Institute of Technology, 30332-0245, Atlanta, GA, USA;Institute of Semiconductor, Guangdong Academy of Sciences, 510651, Guangzhou, People’s Republic of China;Laboratory of Nanophotonic Functional Materials and Devices, Institute of Semiconductor Science and Technology, South China Normal University, 510631, Guangzhou, People’s Republic of China;

关键词: AlGaN/AlN/GaN heterojunction;    Epitaxial lift-off;    Flexible membrane;    Two-dimensional electron gas;    Piezotronic effect;   

DOI  :  10.1007/s40820-021-00589-4

来源: Springer

【 摘 要 】

tsA large size (> 2 cm2) nitride membrane with High-electron-mobility transistor (HEMTs) arrays was successfully separated from sapphire substrate onto flexible substrate by an electrochemical lift-off technique.Without adding extra cost, the piezotronic effect is utilized to optimize the electric transport and thermal conductivity properties of the HEMTs by modulating the physical properties of the 2DEG and phonons.This study aims to open up a new way to fabricate high-performance GaN-based HEMTs and expand practical applications in flexible electronics.

【 授权许可】

CC BY